Photoluminescence dynamics of weakly confined excitons in GaAs thin films

Atsushi Kanno, Redouane Katouf, Osamu Kojima, Junko Ishi-Hayase, Masahide Sasaki, Masahiro Tsuchiya, Toshiro Isu

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons.

Original languageEnglish
Pages (from-to)1069-1071
Number of pages3
JournalJournal of Luminescence
Issue number5-6
Publication statusPublished - 2008 May 1
Externally publishedYes


  • Exciton formation
  • Time-resolved photoluminescence
  • Weakly confined exciton

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Photoluminescence dynamics of weakly confined excitons in GaAs thin films'. Together they form a unique fingerprint.

Cite this