Photoluminescence dynamics of weakly confined excitons in GaAs thin films

Atsushi Kanno; Redouane Katouf; Osamu Kojima; Junko Ishi-Hayase; Masahide Sasaki; Masahiro Tsuchiya; Toshiro Isu

doi:10.1016/j.jlumin.2007.11.002

Photoluminescence dynamics of weakly confined excitons in GaAs thin films

Atsushi Kanno, Redouane Katouf, Osamu Kojima, Junko Ishi-Hayase, Masahide Sasaki, Masahiro Tsuchiya, Toshiro Isu

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons.

Original language	English
Pages (from-to)	1069-1071
Number of pages	3
Journal	Journal of Luminescence
Volume	128
Issue number	5-6
DOIs	https://doi.org/10.1016/j.jlumin.2007.11.002
Publication status	Published - 2008 May 1
Externally published	Yes

Keywords

Exciton formation
Time-resolved photoluminescence
Weakly confined exciton

ASJC Scopus subject areas

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.jlumin.2007.11.002

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title = "Photoluminescence dynamics of weakly confined excitons in GaAs thin films",

abstract = "We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons.",

keywords = "Exciton formation, Time-resolved photoluminescence, Weakly confined exciton",

author = "Atsushi Kanno and Redouane Katouf and Osamu Kojima and Junko Ishi-Hayase and Masahide Sasaki and Masahiro Tsuchiya and Toshiro Isu",

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language = "English",

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T1 - Photoluminescence dynamics of weakly confined excitons in GaAs thin films

AU - Kanno, Atsushi

AU - Katouf, Redouane

AU - Kojima, Osamu

AU - Ishi-Hayase, Junko

AU - Sasaki, Masahide

AU - Tsuchiya, Masahiro

AU - Isu, Toshiro

PY - 2008/5/1

Y1 - 2008/5/1

N2 - We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons.

AB - We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons.

KW - Exciton formation

KW - Time-resolved photoluminescence

KW - Weakly confined exciton

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DO - 10.1016/j.jlumin.2007.11.002

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SP - 1069

EP - 1071

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 5-6

ER -

Photoluminescence dynamics of weakly confined excitons in GaAs thin films

Abstract

Keywords

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