Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

T. Ishikawa; K. Koga; T. Itahashi; L. S. Vlasenko; K. M. Itoh

doi:10.1016/j.physb.2009.08.316

Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

T. Ishikawa, K. Koga, T. Itahashi, L. S. Vlasenko, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call C_T-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the C_T-line is the photoluminescence from a triplet state.

Original language	English
Pages (from-to)	4552-4554
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.316
Publication status	Published - 2009 Dec 15

Keywords

C-line
Photoluminescence
Silicon
Spin triplet state

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2009.08.316

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title = "Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon",

abstract = "We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.",

keywords = "C-line, Photoluminescence, Silicon, Spin triplet state",

author = "T. Ishikawa and K. Koga and T. Itahashi and Vlasenko, {L. S.} and Itoh, {K. M.}",

note = "Funding Information: We thank Gordon Davies for helpful comments. The work was supported in part by the JST-DFG Strategic Cooperative Program on Nanoelectronics, in part by Grant-in-Aid for Scientific Research #18001002, in part by Special Coordination Funds for Promoting Science and Technology, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.physb.2009.08.316",

language = "English",

volume = "404",

pages = "4552--4554",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "23-24",

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TY - JOUR

T1 - Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

AU - Ishikawa, T.

AU - Koga, K.

AU - Itahashi, T.

AU - Vlasenko, L. S.

AU - Itoh, K. M.

N1 - Funding Information: We thank Gordon Davies for helpful comments. The work was supported in part by the JST-DFG Strategic Cooperative Program on Nanoelectronics, in part by Grant-in-Aid for Scientific Research #18001002, in part by Special Coordination Funds for Promoting Science and Technology, and in part by a Grant-in-Aid for the Global Center of Excellence at Keio University.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.

AB - We report luminescence from spin triplet states of excitons bound to interstitial carbon-interstitial oxygen defects in silicon. The peak, which we call CT-line, has an energy 2.64 meV lower than 790 meV (C-line), and splits into three peaks by application of magnetic field. Moreover, its peak position does not depend on the angle between the magnetic field direction and crystallographic orientation indicating the quenching of orbital angular momentum of the hole bound to the defect. These observations lead us to conclude that the CT-line is the photoluminescence from a triplet state.

KW - C-line

KW - Photoluminescence

KW - Silicon

KW - Spin triplet state

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DO - 10.1016/j.physb.2009.08.316

M3 - Article

AN - SCOPUS:74349091888

SN - 0921-4526

VL - 404

SP - 4552

EP - 4554

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 23-24

ER -

Photoluminescence from triplet states of isoelectronic bound excitons at interstitial carbon-intersititial oxygen defects in silicon

Abstract

Keywords

ASJC Scopus subject areas

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