TY - JOUR
T1 - Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates
AU - Zon,
AU - Thainoi, Supachok
AU - Kiravittaya, Suwit
AU - Tandaechanurat, Aniwat
AU - Kanjanachuchai, Songphol
AU - Ratanathammaphan, Somchai
AU - Panyakeow, Somsak
AU - Ota, Yasutomo
AU - Iwamoto, Satoshi
AU - Arakawa, Yasuhiko
N1 - Funding Information:
This research was financially supported by the Research Chair Grant, the National Science and Technology Development Agency (NSTDA), Thailand (Contract No. FDA-CO-2558-1407-TH), the Asian Office of Aerospace Research and Development (AOARD) grant, co-funded with the Office of Naval Research Global (ONRG) under Grant No. FA 2386-16-1-4003, Thailand Research Fund (Contract No. DPG5380002), NANOTEC, NSTDA, Thailand (Contract No. RES-50-016-21-016), and Chulalongkorn University. Ms. Zon acknowledges support from the ASEAN University Network/ Southeast Asia Engineering Education Development Network (AUN/SEED-Net) (Contract No. CU-58-051-EN) and the Ratchadaphiseksomphot Fund for Postdoctoral Fellowships of Chulalongkorn University.
Publisher Copyright:
© 2019 Author(s).
PY - 2019/8/28
Y1 - 2019/8/28
N2 - In this work, we use photoluminescence (PL) spectroscopy to investigate how self-assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier transfer (i.e., carrier recombination in QDs and escape through the barrier layer) is investigated as a function of excitation-power- and temperature-dependent PL measurements. A drastic blueshift of the QD peak energy from 1.23 to 1.30 eV and a further shift to 1.33 eV reveal the influence of the GaSb growth rate and the growth temperature on the optical properties of these QDs. The thermal activation energy is extracted from the temperature-dependent PL by fitting the integrated PL intensity of the QD peaks to the Arrhenius relation. The QDs grown at the growth rate of 0.1 monolayers/s at 450 °C have higher thermal activation energy (109 meV) than those grown at a lower growth rate and higher QD growth temperature. The observed PL characteristics are discussed in terms of QD size, uniformity of QDs, and material intermixing occurring during QD growth on the buffer layer and capping layer.
AB - In this work, we use photoluminescence (PL) spectroscopy to investigate how self-assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier transfer (i.e., carrier recombination in QDs and escape through the barrier layer) is investigated as a function of excitation-power- and temperature-dependent PL measurements. A drastic blueshift of the QD peak energy from 1.23 to 1.30 eV and a further shift to 1.33 eV reveal the influence of the GaSb growth rate and the growth temperature on the optical properties of these QDs. The thermal activation energy is extracted from the temperature-dependent PL by fitting the integrated PL intensity of the QD peaks to the Arrhenius relation. The QDs grown at the growth rate of 0.1 monolayers/s at 450 °C have higher thermal activation energy (109 meV) than those grown at a lower growth rate and higher QD growth temperature. The observed PL characteristics are discussed in terms of QD size, uniformity of QDs, and material intermixing occurring during QD growth on the buffer layer and capping layer.
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U2 - 10.1063/1.5097261
DO - 10.1063/1.5097261
M3 - Article
AN - SCOPUS:85071276629
SN - 0021-8979
VL - 126
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
M1 - 084301
ER -