Photoluminescence recombination centers in ZnO

H. Shibata, H. Tampo, M. Sakai, A. Yamada, K. Matsubara, K. Sakurai, S. Ishizuka, K. Kim, P. Fons, K. Iwata, S. Niki, K. Tamura, K. Nakahara, H. Takasu, K. Maeda, I. Niikura

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We have studied the effects of (i) impurity doping, (ii) rapid thermal annealing, and (iii) crystal polarity control on photoluminescence spectra in the band-edge emission region of high quality ZnO. As a result, we have discussed the possible lattice defects responsible for some photoluminescence emission peaks, namely (i) peak I8 appears at 3.3596 eV, (ii) peak I9 appears at 3.3565 eV and (iii) peak G appears at 3.3327 eV.

Original languageEnglish
Pages (from-to)1026-1029
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number4
Publication statusPublished - 2006
Externally publishedYes
Event12th International Conference on II-VI Compounds - Warsaw, Poland
Duration: 2005 Sept 122005 Sept 16

ASJC Scopus subject areas

  • Condensed Matter Physics


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