@inproceedings{94075cec230342d8be45f169f08b8308,
title = "Photoluminescence study of the driving force for stacking fault expansion in 4H-SiC",
abstract = "We investigated expansion velocities of Shockley stacking faults (SSFs) in 4H-silicon carbide under laser illumination using photoluminescence methods. The experiments showed that the velocity of SSF expansion or the glide velocity of SSF-bounding 30°-Si(g) partial dislocations (PD) is superlinearly dependent on the excitation intensity. We estimated the sample temperature by analyzing the broadening of band-edge emission and concluded that the lattice heating by laser illumination is not the cause of the enhanced dislocation glide. The superlinear dependence can be accounted for by a photo-induced sign reversal of the effective formation energy of the SSF acting as the driving force of SSF expansion under the illumination.",
keywords = "4H-SiC, Photoluminescence, Radiation-enhanced dislocation glide, Stacking faults",
author = "Rii Hirano and Yuki Sato and Michio Tajima and Itoh, {Kohei M.} and Koji Maeda",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.395",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "395--398",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}