Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida; Tejas Krishnamohan; Krishna C. Saraswat; Yoshio Nishi

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The physical mechanisms of μ_e enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔE_C, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m _T of 2-fold valleys parallel to the stress. By using calculated ΔE_C and Δm*, experimental μ_e enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μ_e enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I _d,sat are also discussed.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	129-132
Number of pages	4
Publication status	Published - 2005 Dec 1
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Uchida, K., Krishnamohan, T., Saraswat, K. C., & Nishi, Y. (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 129-132). Article 1609286 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. / Uchida, Ken; Krishnamohan, Tejas; Saraswat, Krishna C. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 129-132 1609286 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, K, Krishnamohan, T, Saraswat, KC & Nishi, Y 2005, Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609286, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 129-132, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

Uchida, Ken ; Krishnamohan, Tejas ; Saraswat, Krishna C. et al. / Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 129-132 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{30560ef1bda04e90945b520715258299,

title = "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime",

abstract = "The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.",

author = "Ken Uchida and Tejas Krishnamohan and Saraswat, {Krishna C.} and Yoshio Nishi",

year = "2005",

month = dec,

day = "1",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "129--132",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

TY - GEN

T1 - Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

AU - Uchida, Ken

AU - Krishnamohan, Tejas

AU - Saraswat, Krishna C.

AU - Nishi, Yoshio

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

AB - The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=33847697736&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847697736&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847697736

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 129

EP - 132

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

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