Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida; Tejas Krishnamohan; Krishna C. Saraswat; Yoshio Nishi

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida
, Tejas Krishnamohan
, Krishna C. Saraswat
, Yoshio Nishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The physical mechanisms of μ_e enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔE_C, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m _T of 2-fold valleys parallel to the stress. By using calculated ΔE_C and Δm*, experimental μ_e enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μ_e enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I _d,sat are also discussed.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	129-132
Number of pages	4
Publication status	Published - 2005
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Uchida, K., Krishnamohan, T., Saraswat, K. C., & Nishi, Y. (2005). Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 129-132). Article 1609286 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. / Uchida, Ken; Krishnamohan, Tejas; Saraswat, Krishna C. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 129-132 1609286 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Uchida, K, Krishnamohan, T, Saraswat, KC & Nishi, Y 2005, Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609286, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 129-132, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

Uchida, Ken ; Krishnamohan, Tejas ; Saraswat, Krishna C. et al. / Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 129-132 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime",

abstract = "The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.",

author = "Ken Uchida and Tejas Krishnamohan and Saraswat, \{Krishna C.\} and Yoshio Nishi",

year = "2005",

language = "English",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

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note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

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AU - Uchida, Ken

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AU - Nishi, Yoshio

PY - 2005

Y1 - 2005

N2 - The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

AB - The physical mechanisms of μe enhancement by uniaxial stress are investigated. From full band calculations, uniaxial-stress-induced split of conduction band edge, ΔEC, and effective mass change, Δm*, are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys in Si (001) FETs is warped due to uniaxial <110> stress, resulting in lighter m T of 2-fold valleys parallel to the stress. By using calculated ΔEC and Δm*, experimental μe enhancement is accurately modeled for biaxial, uniaxial <100>, and uniaxial <110> stress. The limits of μe enhancement and the effectiveness of uniaxial stress engineering in enhancing nFET ballistic I d,sat are also discussed.

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M3 - Conference contribution

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SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 129

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

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ER -

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

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