Piezoelectric photoacoustic spectra of CuInSe2 thin film grown by molecular beam epitaxy

Kenji Yoshino, Atsuhiko Fukuyama, Hirosumi Yokoyama, Kouji Meada, Paul J. Fons, Akimasa Yamada, Shigeru Niki, Tetsuo Ikari

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A CuInSe2 (CIS) film with Cu/In ratio of γ = 1.79 has been grown on (001) oriented GaAs substrate by molecular beam epitaxy (MBE) at substrate temperature of Ts = 450°C, Piezoelectric photoacoustic (PPA) spectra were measured at liquid nitrogen and room temperatures. Two signals due to the non-radiative carrier recombination that correspond to bandgap energies of CIS and GaAs substrate were obtained. After illuminating with secondary light (λ = 1100 nm), two additional PPA peaks were observed for the CIS film at liquid nitrogen temperature. These signals are due to intrinsic defects in the Cu-rich CIS film.

Original languageEnglish
Pages (from-to)591-593
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 1999
Externally publishedYes


  • CuInSe (CIS)
  • Materials
  • PZT
  • Photoacoustic spectra
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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