Point Defect Changes in CuGaSe2 Induced by Gas Annealing

Akimasa Yamada; Akihiko Nishio; Paul Fons; Hajime Shibata; Koji Matsubara; Shigeru Niki; Hisayuki Nakanishi

doi:10.1557/proc-763-b5.17

Point Defect Changes in CuGaSe₂ Induced by Gas Annealing

Akimasa Yamada, Akihiko Nishio, Paul Fons, Hajime Shibata, Koji Matsubara, Shigeru Niki, Hisayuki Nakanishi

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Epitaxial CuGaSe₂ films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Se_x or O₂ ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

Original language	English
Pages (from-to)	213-218
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	763
DOIs	https://doi.org/10.1557/proc-763-b5.17
Publication status	Published - 2003
Externally published	Yes
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States Duration: 2003 Apr 22 → 2003 Apr 25

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Point Defect Changes in CuGaSe2 Induced by Gas Annealing",

abstract = "Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.",

author = "Akimasa Yamada and Akihiko Nishio and Paul Fons and Hajime Shibata and Koji Matsubara and Shigeru Niki and Hisayuki Nakanishi",

year = "2003",

doi = "10.1557/proc-763-b5.17",

language = "English",

volume = "763",

pages = "213--218",

journal = "Materials Research Society Symposium - Proceedings",

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publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics ; Conference date: 22-04-2003 Through 25-04-2003",

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TY - JOUR

T1 - Point Defect Changes in CuGaSe2 Induced by Gas Annealing

AU - Yamada, Akimasa

AU - Nishio, Akihiko

AU - Fons, Paul

AU - Shibata, Hajime

AU - Matsubara, Koji

AU - Niki, Shigeru

AU - Nakanishi, Hisayuki

PY - 2003

Y1 - 2003

N2 - Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

AB - Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

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EP - 218

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics

Y2 - 22 April 2003 through 25 April 2003

ER -

Point Defect Changes in CuGaSe₂ Induced by Gas Annealing

Abstract

ASJC Scopus subject areas

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