Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

H. Tampo; H. Shibata; K. Maejima; A. Yamada; K. Matsubara; P. Fons; S. Kashiwaya; S. Niki; Y. Chiba; T. Wakamatsu; H. Kanie

doi:10.1063/1.3028338

Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

H. Tampo, H. Shibata, K. Maejima, A. Yamada, K. Matsubara, P. Fons, S. Kashiwaya, S. Niki, Y. Chiba, T. Wakamatsu, H. Kanie

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129 Citations (Scopus)

Abstract

Both the formation mechanism and the origin of the two-dimensional electron gas (2DEG) in ZnMgO/ZnO heterostructures have been investigated. The 2DEG in the heterostructures was confirmed to originate from polarization-induced charge and was found to be dominant for transport at low temperatures as well as room temperature (RT) by transport measurements. The origin of 2DEG was concluded to be the surface of the ZnMgO layer based on both capacitance-voltage measurements and the dependence of the carrier concentration on the ZnMgO layer thickness. The largest sheet carrier concentration was 1.1× 10¹³ cm ^-2 and the highest mobility for the heterostructure was obtained for a Mg composition of 0.61 at RT.

Original language	English
Article number	202104
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3028338
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Both the formation mechanism and the origin of the two-dimensional electron gas (2DEG) in ZnMgO/ZnO heterostructures have been investigated. The 2DEG in the heterostructures was confirmed to originate from polarization-induced charge and was found to be dominant for transport at low temperatures as well as room temperature (RT) by transport measurements. The origin of 2DEG was concluded to be the surface of the ZnMgO layer based on both capacitance-voltage measurements and the dependence of the carrier concentration on the ZnMgO layer thickness. The largest sheet carrier concentration was 1.1× 1013 cm -2 and the highest mobility for the heterostructure was obtained for a Mg composition of 0.61 at RT.",

author = "H. Tampo and H. Shibata and K. Maejima and A. Yamada and K. Matsubara and P. Fons and S. Kashiwaya and S. Niki and Y. Chiba and T. Wakamatsu and H. Kanie",

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T1 - Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

AU - Tampo, H.

AU - Shibata, H.

AU - Maejima, K.

AU - Yamada, A.

AU - Matsubara, K.

AU - Fons, P.

AU - Kashiwaya, S.

AU - Niki, S.

AU - Chiba, Y.

AU - Wakamatsu, T.

AU - Kanie, H.

PY - 2008

Y1 - 2008

N2 - Both the formation mechanism and the origin of the two-dimensional electron gas (2DEG) in ZnMgO/ZnO heterostructures have been investigated. The 2DEG in the heterostructures was confirmed to originate from polarization-induced charge and was found to be dominant for transport at low temperatures as well as room temperature (RT) by transport measurements. The origin of 2DEG was concluded to be the surface of the ZnMgO layer based on both capacitance-voltage measurements and the dependence of the carrier concentration on the ZnMgO layer thickness. The largest sheet carrier concentration was 1.1× 1013 cm -2 and the highest mobility for the heterostructure was obtained for a Mg composition of 0.61 at RT.

AB - Both the formation mechanism and the origin of the two-dimensional electron gas (2DEG) in ZnMgO/ZnO heterostructures have been investigated. The 2DEG in the heterostructures was confirmed to originate from polarization-induced charge and was found to be dominant for transport at low temperatures as well as room temperature (RT) by transport measurements. The origin of 2DEG was concluded to be the surface of the ZnMgO layer based on both capacitance-voltage measurements and the dependence of the carrier concentration on the ZnMgO layer thickness. The largest sheet carrier concentration was 1.1× 1013 cm -2 and the highest mobility for the heterostructure was obtained for a Mg composition of 0.61 at RT.

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Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures

Abstract

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