TY - JOUR
T1 - Polarization of photoluminescence from partial dislocations in 4H-SiC
AU - Hirano, Rii
AU - Tsuchida, Hidekazu
AU - Tajima, Michio
AU - Itoh, Kohei M.
AU - Maeda, Koji
PY - 2013/1
Y1 - 2013/1
N2 - Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.
AB - Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.
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U2 - 10.7567/APEX.6.011301
DO - 10.7567/APEX.6.011301
M3 - Article
AN - SCOPUS:84871571222
SN - 1882-0778
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 011301
ER -