@inproceedings{b7e57fd5ec3944a0bc1daa256a63dd4b,
title = "Polarized photoluminescence from partial dislocations in 4H-SiC",
abstract = "Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.",
keywords = "4H-SiC, Dislocation, Photoluminescence, Polarization",
author = "Rii Hirano and Michio Tajima and Hidekazu Tsuchida and Itoh, {Kohei M.} and Koji Maeda",
year = "2014",
doi = "10.4028/www.scientific.net/MSF.778-780.319",
language = "English",
isbn = "9783038350101",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "319--323",
editor = "Hajime Okumura and Hajime Okumura and Hiroshi Harima and Tsunenobu Kimoto and Masahiro Yoshimoto and Heiji Watanabe and Tomoaki Hatayama and Hideharu Matsuura and Yasuhisa Sano and Tsuyoshi Funaki",
booktitle = "Silicon Carbide and Related Materials 2013",
note = "15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 ; Conference date: 29-09-2013 Through 04-10-2013",
}