Polarized photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Michio Tajima, Hidekazu Tsuchida, Kohei M. Itoh, Koji Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
EditorsHajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
PublisherTrans Tech Publications Ltd
Number of pages5
ISBN (Print)9783038350101
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sept 292013 Oct 4

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013


  • 4H-SiC
  • Dislocation
  • Photoluminescence
  • Polarization

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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