TY - JOUR
T1 - Prediction of organic low-k material etching in two frequency capacitively coupled plasma
AU - Ishihara, K.
AU - Shimada, T.
AU - Yagisawa, T.
AU - Makabe, T.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Low-k materials are among the promising interlayer dielectric in terms of reducing the circuit transmission time. H2/N2 plasma is currently considered to be appropriate for organic low-k material etching, with both N and H radicals playing important roles on the feature profile of the etching. We have numerically estimated the influence of active species on the feature profile evolution of an organic low-k by changing the H 2/N2 mixture ratio by using a hybrid numerical model (extended-VicAddress), through the predictive image of the two frequency capacitively coupled plasma in H2/N2. We also discuss typical external plasma conditions producing a taper and bowing profiles. The predicted etch rate and feature profile reasonably reproduce the previous experimental results.
AB - Low-k materials are among the promising interlayer dielectric in terms of reducing the circuit transmission time. H2/N2 plasma is currently considered to be appropriate for organic low-k material etching, with both N and H radicals playing important roles on the feature profile of the etching. We have numerically estimated the influence of active species on the feature profile evolution of an organic low-k by changing the H 2/N2 mixture ratio by using a hybrid numerical model (extended-VicAddress), through the predictive image of the two frequency capacitively coupled plasma in H2/N2. We also discuss typical external plasma conditions producing a taper and bowing profiles. The predicted etch rate and feature profile reasonably reproduce the previous experimental results.
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U2 - 10.1088/0741-3335/48/12B/S10
DO - 10.1088/0741-3335/48/12B/S10
M3 - Article
AN - SCOPUS:35148883866
SN - 0741-3335
VL - 48
SP - B99-B104
JO - Plasma Physics and Controlled Fusion
JF - Plasma Physics and Controlled Fusion
IS - 12 B
ER -