Prediction of plasma charging damage during SiO2 etching by VicAddress

T. Yagisawa; T. Ohmori; T. Shimada; T. Makabe

doi:10.1109/PPID.2003.1200930

Prediction of plasma charging damage during SiO₂ etching by VicAddress

T. Yagisawa, T. Ohmori, T. Shimada, T. Makabe

Vice-President

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have proposed a prototype of plasma processing CAD, i.e. Vertically Integrated Computer Aided Design for Device processing (VicAddress), that numerically predicts dry etching and related charging damage to a future profile and nanometer scale lower-level elements in ULSI, as well as the low temperature plasma structure. VicAddress has been applied to investigate the dry etching of SiO₂ film, that requires ions with several hundred to a thousand of eV. Negative ion injection to a wafer was numerically predicted and designed in a pulsed two-frequency capacitively coupled plasma (2f-CCP) operated by a VHF (100 MHz) - LF (1 MHz) system. In this paper, we predict the velocity distribution incident on a wafer in a pulsed 2f-CCP by using a Monte Carlo method under the plasma structure given by RCT modeling. We discuss: functional separation of very high frequency sustaining and low frequency biasing sources; the negative charge injection mode to the SiO₂ wafer during etching; and control of excess-dissociation of CFj by high energy secondary electrons.

Original language	English
Title of host publication	2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	97-99
Number of pages	3
Volume	2003-January
ISBN (Electronic)	0780377478
DOIs	https://doi.org/10.1109/PPID.2003.1200930
Publication status	Published - 2003
Event	2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France Duration: 2003 Apr 24 → 2003 Apr 25

Other

Other	2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
Country/Territory	France
City	Corbeil-Essonnes
Period	03/4/24 → 03/4/25

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/PPID.2003.1200930

Cite this

Prediction of plasma charging damage during SiO₂ etching by VicAddress. / Yagisawa, T.; Ohmori, T.; Shimada, T. et al.
2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 97-99 1200930.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yagisawa, T, Ohmori, T, Shimada, T & Makabe, T 2003, Prediction of plasma charging damage during SiO₂ etching by VicAddress. in 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. vol. 2003-January, 1200930, Institute of Electrical and Electronics Engineers Inc., pp. 97-99, 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003, Corbeil-Essonnes, France, 03/4/24. https://doi.org/10.1109/PPID.2003.1200930

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abstract = "We have proposed a prototype of plasma processing CAD, i.e. Vertically Integrated Computer Aided Design for Device processing (VicAddress), that numerically predicts dry etching and related charging damage to a future profile and nanometer scale lower-level elements in ULSI, as well as the low temperature plasma structure. VicAddress has been applied to investigate the dry etching of SiO2 film, that requires ions with several hundred to a thousand of eV. Negative ion injection to a wafer was numerically predicted and designed in a pulsed two-frequency capacitively coupled plasma (2f-CCP) operated by a VHF (100 MHz) - LF (1 MHz) system. In this paper, we predict the velocity distribution incident on a wafer in a pulsed 2f-CCP by using a Monte Carlo method under the plasma structure given by RCT modeling. We discuss: functional separation of very high frequency sustaining and low frequency biasing sources; the negative charge injection mode to the SiO2 wafer during etching; and control of excess-dissociation of CFj by high energy secondary electrons.",

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AB - We have proposed a prototype of plasma processing CAD, i.e. Vertically Integrated Computer Aided Design for Device processing (VicAddress), that numerically predicts dry etching and related charging damage to a future profile and nanometer scale lower-level elements in ULSI, as well as the low temperature plasma structure. VicAddress has been applied to investigate the dry etching of SiO2 film, that requires ions with several hundred to a thousand of eV. Negative ion injection to a wafer was numerically predicted and designed in a pulsed two-frequency capacitively coupled plasma (2f-CCP) operated by a VHF (100 MHz) - LF (1 MHz) system. In this paper, we predict the velocity distribution incident on a wafer in a pulsed 2f-CCP by using a Monte Carlo method under the plasma structure given by RCT modeling. We discuss: functional separation of very high frequency sustaining and low frequency biasing sources; the negative charge injection mode to the SiO2 wafer during etching; and control of excess-dissociation of CFj by high energy secondary electrons.

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