Preparation of Cu(In1-xGax)Se2 thin films and solar cells using a se-radical beam source

Shogo Ishizuka, Akimasa Yamada, Hajime Shibata, Keiichiro Sakurai, Paul Fons, Koji Matsubara, Shigeru Niki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Cu(In,Ga)Se2 (CIGS) thin films were grown using a MBE apparatus equipped with a RF-cracked Se-radical beam source that meets the technical challenges of high quality CIGS film growth, efficient use of Se source material, and precise control of growth conditions and material properties. A unique combination of film properties: a highly dense and smooth surface, large grain size is shown. A competitive energy conversion efficiency of 17 % has been demonstrated from a solar cell fabricated using a CIGS absorber grown with a Se-radical source. In addition to the unique combination of film properties and high photovoltaic performance, a significant improvement in the use of Se source material in comparison with the conventional Seevaporative sources has been demonstrated.

Original languageEnglish
Title of host publication2007 MRS Spring Meeting
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781558999725
Publication statusPublished - 2007
Externally publishedYes
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 102007 Apr 12

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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