TY - JOUR
T1 - Programmable single-electron transistor logic for future low-power intelligent LSI
T2 - Proposal and room-temperature operation
AU - Uchida, Ken
AU - Koga, Junji
AU - Ohba, Ryuji
AU - Toriumi, Akira
N1 - Funding Information:
Manuscript received October 1, 2002; revised April 7, 2003. This work was supported by NEDO and partly performed under the management of FED as a part of the METI R&D Program (Quantum Functional Devices Project). The review of this paper was arranged by Editor S. Datta.
PY - 2003
Y1 - 2003
N2 - This paper proposes, for the first time, the concept of programmable logic circuit realized with single-electron transistors (SETs). An SET having nonvolatile memory function is a key element for the programmable SET logic. The writing and erasing operations of the nonvolatile memory function make it possible to tune the phase of Coulomb oscillations. The half-period phase shift induced by the memory function makes the function of SETs complementary to that of the conventional SETs. As a result, SETs having nonvolatile memory function have the functionality of both the conventional (nMOS-like) SETs and the complementary (pMOS-like) SETs. By utilizing this fact, the function of SET circuits can be programmed with great flexibility, on the basis of the information stored by the memory functions. We have successfully fabricated SETs that operate at room temperature and observed the highest room-temperature peak-to-valley current ratio of Coulomb oscillations. The operation of the programmable SET logic is demonstrated using the room-temperature operating SETs. This is the first demonstration of room-temperature SET logic operation. The proposed programmable SET logic provides the potential for low-power, intelligent LSI chips suitable for mobile applications.
AB - This paper proposes, for the first time, the concept of programmable logic circuit realized with single-electron transistors (SETs). An SET having nonvolatile memory function is a key element for the programmable SET logic. The writing and erasing operations of the nonvolatile memory function make it possible to tune the phase of Coulomb oscillations. The half-period phase shift induced by the memory function makes the function of SETs complementary to that of the conventional SETs. As a result, SETs having nonvolatile memory function have the functionality of both the conventional (nMOS-like) SETs and the complementary (pMOS-like) SETs. By utilizing this fact, the function of SET circuits can be programmed with great flexibility, on the basis of the information stored by the memory functions. We have successfully fabricated SETs that operate at room temperature and observed the highest room-temperature peak-to-valley current ratio of Coulomb oscillations. The operation of the programmable SET logic is demonstrated using the room-temperature operating SETs. This is the first demonstration of room-temperature SET logic operation. The proposed programmable SET logic provides the potential for low-power, intelligent LSI chips suitable for mobile applications.
KW - Coulomb blockade
KW - Memories
KW - Programmable logic devices
KW - Quantum dots (QDs)
KW - Quantum effect semiconductor devices
KW - Silicon on insulator technology
KW - Single-electron phenomena
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U2 - 10.1109/TED.2003.813909
DO - 10.1109/TED.2003.813909
M3 - Article
AN - SCOPUS:0042026550
SN - 0018-9383
VL - 50
SP - 1623
EP - 1630
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 7
ER -