Properties of CuInSe2 epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy

S. Niki; P. J. Fons; A. Yamada; T. Kurafuji; Wengang Bi; Y. Makita; Charles W. Tu

Properties of CuInSe₂ epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy

S. Niki, P. J. Fons, A. Yamada, T. Kurafuji, Wengang Bi, Y. Makita, Charles W. Tu

Research output: Contribution to journal › Article › peer-review

Abstract

CuInSe₂(CIS) films have been grown by molecular beam epitaxy on pseudo lattice-matched substrates which consist of a 1μm-thick In_0.29Ga_0.71 As layer grown on (001)-oriented GaAs substrates interposed with a linearly composition-graded In _xGa_1-xAs buffer (0≤x≤0.29), and have been characterized in comparison with the films grown directly on GaAs (001). High resolution X-ray diffraction analysis on CIS grown on pseudo lattice-matched substrates indicated the reduction of residual strain in the CIS films. Sharp free exciton emissions have been predominantly observed for the first time from the CIS films indicative of significant improvement in crystalline quality and of reduction of point defects. It also suggests that the misfit strain plays an important role in the formation of point defects in CIS epitaxial films.

Original language	English
Pages (from-to)	X3-152
Journal	Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory
Volume	60
Issue number	3
Publication status	Published - 1996
Externally published	Yes

Keywords

CuInSe

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Properties of CuInSe2 epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy",

abstract = "CuInSe2(CIS) films have been grown by molecular beam epitaxy on pseudo lattice-matched substrates which consist of a 1μm-thick In0.29Ga0.71 As layer grown on (001)-oriented GaAs substrates interposed with a linearly composition-graded In xGa1-xAs buffer (0≤x≤0.29), and have been characterized in comparison with the films grown directly on GaAs (001). High resolution X-ray diffraction analysis on CIS grown on pseudo lattice-matched substrates indicated the reduction of residual strain in the CIS films. Sharp free exciton emissions have been predominantly observed for the first time from the CIS films indicative of significant improvement in crystalline quality and of reduction of point defects. It also suggests that the misfit strain plays an important role in the formation of point defects in CIS epitaxial films.",

keywords = "CuInSe",

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year = "1996",

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issn = "0366-9092",

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TY - JOUR

T1 - Properties of CuInSe2 epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy

AU - Niki, S.

AU - Fons, P. J.

AU - Yamada, A.

AU - Kurafuji, T.

AU - Bi, Wengang

AU - Makita, Y.

AU - Tu, Charles W.

PY - 1996

Y1 - 1996

N2 - CuInSe2(CIS) films have been grown by molecular beam epitaxy on pseudo lattice-matched substrates which consist of a 1μm-thick In0.29Ga0.71 As layer grown on (001)-oriented GaAs substrates interposed with a linearly composition-graded In xGa1-xAs buffer (0≤x≤0.29), and have been characterized in comparison with the films grown directly on GaAs (001). High resolution X-ray diffraction analysis on CIS grown on pseudo lattice-matched substrates indicated the reduction of residual strain in the CIS films. Sharp free exciton emissions have been predominantly observed for the first time from the CIS films indicative of significant improvement in crystalline quality and of reduction of point defects. It also suggests that the misfit strain plays an important role in the formation of point defects in CIS epitaxial films.

AB - CuInSe2(CIS) films have been grown by molecular beam epitaxy on pseudo lattice-matched substrates which consist of a 1μm-thick In0.29Ga0.71 As layer grown on (001)-oriented GaAs substrates interposed with a linearly composition-graded In xGa1-xAs buffer (0≤x≤0.29), and have been characterized in comparison with the films grown directly on GaAs (001). High resolution X-ray diffraction analysis on CIS grown on pseudo lattice-matched substrates indicated the reduction of residual strain in the CIS films. Sharp free exciton emissions have been predominantly observed for the first time from the CIS films indicative of significant improvement in crystalline quality and of reduction of point defects. It also suggests that the misfit strain plays an important role in the formation of point defects in CIS epitaxial films.

KW - CuInSe

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IS - 3

ER -

Properties of CuInSe₂ epitaxial films grown on Pseudo lattice-matched substrates grown by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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