Pr3+:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

Kodai Iijima; Ryosuke Kariyama; Hiroki Tanaka; Fumihiko Kannari

doi:10.1364/AO.55.007782

Pr³⁺:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

Kodai Iijima, Ryosuke Kariyama, Hiroki Tanaka, Fumihiko Kannari

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We attain stable mode-locking of an InGaN laser-diode-pumped Pr³⁺:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.

Original language	English
Pages (from-to)	7782-7787
Number of pages	6
Journal	Applied Optics
Volume	55
Issue number	28
DOIs	https://doi.org/10.1364/AO.55.007782
Publication status	Published - 2016 Oct 1

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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title = "Pr3+:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers",

abstract = "We attain stable mode-locking of an InGaN laser-diode-pumped Pr3+:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.",

author = "Kodai Iijima and Ryosuke Kariyama and Hiroki Tanaka and Fumihiko Kannari",

note = "Funding Information: Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan; JSPS KAKENHI (24656055). We gratefully thank Nichia Inc. for supplying the high-power InGaN blue laser diodes. Publisher Copyright: {\textcopyright} 2016 Optical Society of America.",

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doi = "10.1364/AO.55.007782",

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T1 - Pr3+:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

AU - Iijima, Kodai

AU - Kariyama, Ryosuke

AU - Tanaka, Hiroki

AU - Kannari, Fumihiko

N1 - Funding Information: Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan; JSPS KAKENHI (24656055). We gratefully thank Nichia Inc. for supplying the high-power InGaN blue laser diodes. Publisher Copyright: © 2016 Optical Society of America.

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We attain stable mode-locking of an InGaN laser-diode-pumped Pr3+:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.

AB - We attain stable mode-locking of an InGaN laser-diode-pumped Pr3+:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz. We also attempted Kerr-lens mode-locking by employing an SF57 glass in a cavity as a Kerr medium.

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Pr³⁺:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

Abstract

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