Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara; H. Kamada; Y. H. Zhang; T. Tanabe; N. I. Cade; D. Ding; S. R. Johnson; H. Gotoh; E. Kuramochi; M. Notomi; T. Sogawa

doi:10.1364/OE.16.005199

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

T. Tawara
, H. Kamada
, Y. H. Zhang
, T. Tanabe
, N. I. Cade
, D. Ding
, S. R. Johnson
, H. Gotoh
, E. Kuramochi
, M. Notomi
, T. Sogawa

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

Original language	English
Pages (from-to)	5199-5205
Number of pages	7
Journal	Optics Express
Volume	16
Issue number	8
DOIs	https://doi.org/10.1364/OE.16.005199
Publication status	Published - 2008 Apr 14
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.",

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T1 - Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

AU - Tawara, T.

AU - Kamada, H.

AU - Zhang, Y. H.

AU - Tanabe, T.

AU - Cade, N. I.

AU - Ding, D.

AU - Johnson, S. R.

AU - Gotoh, H.

AU - Kuramochi, E.

AU - Notomi, M.

AU - Sogawa, T.

PY - 2008/4/14

Y1 - 2008/4/14

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AB - We demonstrate lasing action with a high spontaneous emission factor and temperature insensitivity in InAs/InGaAs quantum dots (QD) embedded in photonic crystal nanocavities. A quality factor (Q) of over 10,000 was achieved by suppressing the material absorption by QDs uncoupled to the cavity mode. High Q cavities exhibited ultra low threshold lasing with a spontaneous emission factor of 0.7. Less frequent carrier escape from the QDs, which was primarily favored by high potential barrier energy, enabled low threshold lasing up to 90 K.

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JO - Optics Express

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ER -

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

Abstract

ASJC Scopus subject areas

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