Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

K. Shimizu; Y. Einaga; A. Fujishima; K. Ohnishi

doi:10.1002/sia.1158

Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

K. Shimizu, Y. Einaga, A. Fujishima, K. Ohnishi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

Original language	English
Pages (from-to)	35-40
Number of pages	6
Journal	Surface and Interface Analysis
Volume	33
Issue number	1
DOIs	https://doi.org/10.1002/sia.1158
Publication status	Published - 2002 Jan

Keywords

CVD
Diamond
Films
GDOES
Glow discharge optical emission spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.1158

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abstract = "Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.",

keywords = "CVD, Diamond, Films, GDOES, Glow discharge optical emission spectroscopy",

author = "K. Shimizu and Y. Einaga and A. Fujishima and K. Ohnishi",

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language = "English",

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AU - Shimizu, K.

AU - Einaga, Y.

AU - Fujishima, A.

AU - Ohnishi, K.

PY - 2002/1

Y1 - 2002/1

N2 - Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

AB - Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

KW - CVD

KW - Diamond

KW - Films

KW - GDOES

KW - Glow discharge optical emission spectroscopy

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JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1

ER -

Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

Abstract

Keywords

ASJC Scopus subject areas

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