Radio-frequency plasma modeling for low-temperature processing

Toshiaki Makabe

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

Original languageEnglish
Pages (from-to)127-154
Number of pages28
JournalAdvances in Atomic, Molecular and Optical Physics
Issue numberC
Publication statusPublished - 2001

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Electronic, Optical and Magnetic Materials


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