Radio-frequency plasma modeling for low-temperature processing

Toshiaki Makabe

doi:10.1016/S1049-250X(01)80031-8

Radio-frequency plasma modeling for low-temperature processing

Toshiaki Makabe

Vice-President

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

Original language	English
Pages (from-to)	127-154
Number of pages	28
Journal	Advances in Atomic, Molecular and Optical Physics
Volume	44
Issue number	C
DOIs	https://doi.org/10.1016/S1049-250X(01)80031-8
Publication status	Published - 2001

ASJC Scopus subject areas

Statistical and Nonlinear Physics
Electronic, Optical and Magnetic Materials

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10.1016/S1049-250X(01)80031-8

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@article{afc8d259b08f459ca17ac92264f48338,

title = "Radio-frequency plasma modeling for low-temperature processing",

abstract = "Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.",

author = "Toshiaki Makabe",

year = "2001",

doi = "10.1016/S1049-250X(01)80031-8",

language = "English",

volume = "44",

pages = "127--154",

journal = "Advances in Atomic, Molecular and Optical Physics",

issn = "1049-250X",

publisher = "Academic Press Inc.",

number = "C",

}

TY - JOUR

T1 - Radio-frequency plasma modeling for low-temperature processing

AU - Makabe, Toshiaki

PY - 2001

Y1 - 2001

N2 - Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

AB - Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

UR - http://www.scopus.com/inward/record.url?scp=0001350670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001350670&partnerID=8YFLogxK

U2 - 10.1016/S1049-250X(01)80031-8

DO - 10.1016/S1049-250X(01)80031-8

M3 - Article

AN - SCOPUS:0001350670

SN - 1049-250X

VL - 44

SP - 127

EP - 154

JO - Advances in Atomic, Molecular and Optical Physics

JF - Advances in Atomic, Molecular and Optical Physics

IS - C

ER -

Radio-frequency plasma modeling for low-temperature processing

Abstract

ASJC Scopus subject areas

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