Abstract
We demonstrate Raman spectroscopy determination of stresses and strains as a function of distance from the growth interface in a 2.2 μm thick 3C-SiC film grown on a 6-inch Si substrate using low-pressure chemical vapor deposition. The Raman measurements have been performed with the back-scattering geometry on the SiC film that has been reactive ion etched to various thicknesses (0.44 - 2.2 μm). The values of the stress and strain determined as a function of the distance from the interface show maximum at the interface, decrease rapidly between 0 and 0.7 μm, and become constant between 0.7 and 2.2 μm. We believe this is a clear evidence for relaxation of stress and strain at the first 0.7 μm growth of SiC films on Si.
Original language | English |
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Pages (from-to) | 669-672 |
Number of pages | 4 |
Journal | Materials Science Forum |
Volume | 264-268 |
Issue number | PART 1 |
Publication status | Published - 1998 Jan 1 |
Keywords
- 3C-SiC/Si
- Raman Spectroscopy
- Strains
- Stresses
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering