Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

K. S. Andrikopoulos; S. N. Yannopoulos; A. V. Kolobov; P. Fons; J. Tominaga

doi:10.1016/j.jpcs.2007.02.027

Raman scattering study of GeTe and Ge₂Sb₂Te₅ phase-change materials

K. S. Andrikopoulos, S. N. Yannopoulos, A. V. Kolobov, P. Fons, J. Tominaga

Research output: Contribution to journal › Article › peer-review

166 Citations (Scopus)

Abstract

Structural details of the amorphous binary GeTe and ternary Ge₂Sb₂Te₅ (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe_4-nGe_n (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb₂T₃ component in Raman scattering; reasons about this explanation, as well as for the lack of any Te-Te bonds are briefly described.

Original language	English
Pages (from-to)	1074-1078
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	68
Issue number	5-6
DOIs	https://doi.org/10.1016/j.jpcs.2007.02.027
Publication status	Published - 2007 May
Externally published	Yes

Keywords

A. Amorphous materials
A. Chalcogenides
C. Raman spectroscopy
D. Phase transitions

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2007.02.027

Cite this

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title = "Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials",

abstract = "Structural details of the amorphous binary GeTe and ternary Ge2Sb2Te5 (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe4-nGen (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb2T3 component in Raman scattering; reasons about this explanation, as well as for the lack of any Te-Te bonds are briefly described.",

keywords = "A. Amorphous materials, A. Chalcogenides, C. Raman spectroscopy, D. Phase transitions",

author = "Andrikopoulos, {K. S.} and Yannopoulos, {S. N.} and Kolobov, {A. V.} and P. Fons and J. Tominaga",

note = "Funding Information: The Greek side acknowledges financial support from the General Secretariat for Research and Technology—Hellas in the framework of the bilateral project GR-CZ (2005–2007).",

year = "2007",

month = may,

doi = "10.1016/j.jpcs.2007.02.027",

language = "English",

volume = "68",

pages = "1074--1078",

journal = "Journal of Physics and Chemistry of Solids",

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T1 - Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials

AU - Andrikopoulos, K. S.

AU - Yannopoulos, S. N.

AU - Kolobov, A. V.

AU - Fons, P.

AU - Tominaga, J.

N1 - Funding Information: The Greek side acknowledges financial support from the General Secretariat for Research and Technology—Hellas in the framework of the bilateral project GR-CZ (2005–2007).

PY - 2007/5

Y1 - 2007/5

N2 - Structural details of the amorphous binary GeTe and ternary Ge2Sb2Te5 (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe4-nGen (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb2T3 component in Raman scattering; reasons about this explanation, as well as for the lack of any Te-Te bonds are briefly described.

AB - Structural details of the amorphous binary GeTe and ternary Ge2Sb2Te5 (GST) phase-change materials are investigated with the aid of Raman scattering. In the case of the a-GeTe, a plethora of Raman bands have been recorded and assigned on the basis of a network structure consisting of corner- and edge-sharing tetrahedra of the type GeTe4-nGen (n=0, 1, 2, 3, 4). Significant temperature-induced structural changes take place in this material even at temperatures well below the crystallization temperature. These changes tend to organize the local structure, in particular the coordination number of Ge atoms, so as to facilitate the amorphous-to-crystal transformation. The much simpler Raman spectrum of GST, characterized by one vibrational band, is accounted for by the dominance of the Sb2T3 component in Raman scattering; reasons about this explanation, as well as for the lack of any Te-Te bonds are briefly described.

KW - A. Amorphous materials

KW - A. Chalcogenides

KW - C. Raman spectroscopy

KW - D. Phase transitions

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