Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb3 Superlattices

A. V. Kolobov, P. Fons, Y. Saito, J. Tominaga

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


GeTe/Sb2Te3 superlattices, also known as interfacial phase-change memory (iPCM), exhibit significantly faster switching and are characterized by much lower power consumption and longer data retention compared to devices based on alloyed materials. In early work, the superior performance of iPCM was linked to a crystal-crystal transition between the SET and RESET states. As the primary mechanism, a change in the stacking order of Ge and Te planes within a GeTe block was suggested. Subsequent STEM studies on epitaxial GeTe/Sb2Te3 superlattices demonstrated that the GeTe blocks were not located between Sb2Te3 quintuple layers but, were incorporated inside the latter, providing a serious challenge to the early explanation. In this work, we demonstrate that changes associated with the reconstruction of the SbTe terminating layers nearest to van der Waals gap leads to a pronounced change in the density of states and can serve as an alternative explanation for a large property contrast between the SET and RESET states in GeTe/Sb2Te3 superlattices.

Original languageEnglish
Pages (from-to)3413-3418
Number of pages6
JournalMRS Advances
Issue number57-58
Publication statusPublished - 2018
Externally publishedYes


  • 2D materials
  • Ge
  • Sb
  • Te
  • memory

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics


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