Abstract
Epitaxial Ge 2Sb 2Te 5 films grown on Si(111) by molecular beam epitaxy were reversibly switched between crystalline and amorphous states over a large area using femtosecond laser pulses. The structural and spatial homogeneity of the as-grown epitaxial and laser-switched areas on the sample were investigated by synchrotron nanofocus high resolution x-ray diffraction. The investigation clearly demonstrated that the single crystalline metastable cubic phase of Ge 2Sb 2Te 5 is restored after switching. No polycrystalline features, not only on the average but even on the nanometer scale of the x-ray beam, were observed.
Original language | English |
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Article number | 061903 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2012 Aug 6 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)