Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material

Nurrul Syafawati Binti Humam; Yu Sato; Motoki Takahashi; Shohei Kanazawa; Nobuhiro Tsumori; Philippe Regreny; Michel Gendry; Toshiharu Saiki

doi:10.1364/OE.22.014830

Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material

Nurrul Syafawati Binti Humam, Yu Sato, Motoki Takahashi, Shohei Kanazawa, Nobuhiro Tsumori, Philippe Regreny, Michel Gendry, Toshiharu Saiki

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.

Original language	English
Pages (from-to)	14830-14839
Number of pages	10
Journal	Optics Express
Volume	22
Issue number	12
DOIs	https://doi.org/10.1364/OE.22.014830
Publication status	Published - 2014 Jun 16

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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@article{be8fe5a530be4e21a28775d6d6da26df,

title = "Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material",

abstract = "We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.",

author = "Humam, {Nurrul Syafawati Binti} and Yu Sato and Motoki Takahashi and Shohei Kanazawa and Nobuhiro Tsumori and Philippe Regreny and Michel Gendry and Toshiharu Saiki",

year = "2014",

month = jun,

day = "16",

doi = "10.1364/OE.22.014830",

language = "English",

volume = "22",

pages = "14830--14839",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "12",

}

TY - JOUR

T1 - Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material

AU - Humam, Nurrul Syafawati Binti

AU - Sato, Yu

AU - Takahashi, Motoki

AU - Kanazawa, Shohei

AU - Tsumori, Nobuhiro

AU - Regreny, Philippe

AU - Gendry, Michel

AU - Saiki, Toshiharu

PY - 2014/6/16

Y1 - 2014/6/16

N2 - We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.

AB - We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.

UR - http://www.scopus.com/inward/record.url?scp=84902976084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902976084&partnerID=8YFLogxK

U2 - 10.1364/OE.22.014830

DO - 10.1364/OE.22.014830

M3 - Article

AN - SCOPUS:84902976084

SN - 1094-4087

VL - 22

SP - 14830

EP - 14839

JO - Optics Express

JF - Optics Express

IS - 12

ER -

Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material

Abstract

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