Reduction in crystallization time of Sb:Te films through addition of Bi

R. E. Simpson; D. W. Hewak; P. Fons; J. Tominaga; S. Guerin; B. E. Hayden

doi:10.1063/1.2901161

Reduction in crystallization time of Sb:Te films through addition of Bi

R. E. Simpson, D. W. Hewak, P. Fons, J. Tominaga, S. Guerin, B. E. Hayden

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The electrical, optical, and phase change properties of bismuth doped Sb8 Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8 Te2 materials show potential as the active material in phase change data storage media.

Original language	English
Article number	141921
Journal	Applied Physics Letters
Volume	92
Issue number	14
DOIs	https://doi.org/10.1063/1.2901161
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Reduction in crystallization time of Sb:Te films through addition of Bi",

abstract = "The electrical, optical, and phase change properties of bismuth doped Sb8 Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8 Te2 materials show potential as the active material in phase change data storage media.",

author = "Simpson, {R. E.} and Hewak, {D. W.} and P. Fons and J. Tominaga and S. Guerin and Hayden, {B. E.}",

note = "Funding Information: We acknowledge the support of Ilika Technologies for funding the static tester and the Japanese Society for Promotion of Science for R. Simpson{\textquoteright}s summer {\textquoteright}06 research scholarship. ",

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volume = "92",

journal = "Applied Physics Letters",

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T1 - Reduction in crystallization time of Sb:Te films through addition of Bi

AU - Simpson, R. E.

AU - Hewak, D. W.

AU - Fons, P.

AU - Tominaga, J.

AU - Guerin, S.

AU - Hayden, B. E.

N1 - Funding Information: We acknowledge the support of Ilika Technologies for funding the static tester and the Japanese Society for Promotion of Science for R. Simpson’s summer ’06 research scholarship.

PY - 2008

Y1 - 2008

N2 - The electrical, optical, and phase change properties of bismuth doped Sb8 Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8 Te2 materials show potential as the active material in phase change data storage media.

AB - The electrical, optical, and phase change properties of bismuth doped Sb8 Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8 Te2 materials show potential as the active material in phase change data storage media.

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Reduction in crystallization time of Sb:Te films through addition of Bi

Abstract

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