TY - GEN
T1 - Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film
AU - Tanaka, D.
AU - Ikuma, Y.
AU - Toyosaki, T.
AU - Tsuda, H.
AU - Shoji, Y.
AU - Kintaka, K.
AU - Kawashima, H.
AU - Kuwahara, M.
AU - Wang, X.
PY - 2011
Y1 - 2011
N2 - Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.
AB - Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.
KW - optical switch
KW - phase change material
KW - rib waveguide
KW - silicon on insulator
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U2 - 10.1109/ISAS.2011.5960937
DO - 10.1109/ISAS.2011.5960937
M3 - Conference contribution
AN - SCOPUS:80051826535
SN - 9781457707179
T3 - Proceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011
SP - 147
EP - 149
BT - Proceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011
T2 - 2011 1st International Symposium on Access Spaces, ISAS 2011
Y2 - 17 June 2011 through 19 June 2011
ER -