Robustness of Voltage-induced Magnetocapacitance

Hideo Kaiju, Takahiro Misawa, Taro Nagahama, Takashi Komine, Osamu Kitakami, Masaya Fujioka, Junji Nishii, Gang Xiao

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co40Fe40B20/MgO/Co40Fe40B20. We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Fröhlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.

Original languageEnglish
Article number14709
JournalScientific reports
Issue number1
Publication statusPublished - 2018 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • General


Dive into the research topics of 'Robustness of Voltage-induced Magnetocapacitance'. Together they form a unique fingerprint.

Cite this