Abstract
Transparent and conductive Al-doped ZnO films have been deposited at room temperature by oxygen radical-assisted pulsed laser deposition. An average optical transmittance of more than 86% (0.7 μm film thickness) in the wavelength range 400-800 nm and resistivity as low as 5 × 10-4 Ω cm were obtained from films deposited using a radical oxygen source. The surface roughness of the ZnO films measured by means of atomic force microscopy was found to be below 1 nm, suggesting that soft deposition techniques with low kinetic energy sources can make possible the deposition of high-quality transparent conducting ZnO films, even at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 176-179 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 422 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2002 Dec 20 |
| Externally published | Yes |
Keywords
- Pulsed laser deposition
- Thin film
- Transparent conductive oxide
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry