Room temperature ferromagnetism at the interface between nonmagnetic semiconductors

Yuka Yazaki; Masayuki Suda; Naoto Kameyama; Yasuaki Einaga

doi:10.1246/cl.2010.594

Room temperature ferromagnetism at the interface between nonmagnetic semiconductors

Yuka Yazaki, Masayuki Suda, Naoto Kameyama, Yasuaki Einaga

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We show experimentally that room-temperature ferromagnetism can be induced in ZnO/ZnS core/shell nanoparticles without any magnetic components. This ferromagnetism could be attributed to p-p coupling interactions between S 3p and O 2p electrons arising from the redistribution of charges between Zn and O or S atoms. Our present findings possibly open up a new way for introducing magnetism in semiconductor-based "spintronics" devices.

Original language	English
Pages (from-to)	594-595
Number of pages	2
Journal	Chemistry Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1246/cl.2010.594
Publication status	Published - 2010

ASJC Scopus subject areas

Chemistry(all)

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10.1246/cl.2010.594

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AU - Yazaki, Yuka

AU - Suda, Masayuki

AU - Kameyama, Naoto

AU - Einaga, Yasuaki

PY - 2010

Y1 - 2010

N2 - We show experimentally that room-temperature ferromagnetism can be induced in ZnO/ZnS core/shell nanoparticles without any magnetic components. This ferromagnetism could be attributed to p-p coupling interactions between S 3p and O 2p electrons arising from the redistribution of charges between Zn and O or S atoms. Our present findings possibly open up a new way for introducing magnetism in semiconductor-based "spintronics" devices.

AB - We show experimentally that room-temperature ferromagnetism can be induced in ZnO/ZnS core/shell nanoparticles without any magnetic components. This ferromagnetism could be attributed to p-p coupling interactions between S 3p and O 2p electrons arising from the redistribution of charges between Zn and O or S atoms. Our present findings possibly open up a new way for introducing magnetism in semiconductor-based "spintronics" devices.

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Room temperature ferromagnetism at the interface between nonmagnetic semiconductors

Abstract

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