Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Jun Tatebayashi; Satoshi Kako; Jinfa Ho; Yasutomo Ota; Satoshi Iwamoto; Yasuhiko Arakawa

doi:10.1364/CLEO_SI.2015.SM2F.1

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Jun Tatebayashi, Satoshi Kako, Jinfa Ho, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In_0.22Ga_0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μJ/cm².

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, CLEO-SI 2015
Publisher	Optical Society of America (OSA)
Pages	2267
Number of pages	1
ISBN (Electronic)	9781557529688
DOIs	https://doi.org/10.1364/CLEO_SI.2015.SM2F.1
Publication status	Published - 2015 May 4
Externally published	Yes
Event	CLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15

Publication series

Name	CLEO: Science and Innovations, CLEO-SI 2015

Other

Other	CLEO: Science and Innovations, CLEO-SI 2015
Country/Territory	United States
City	San Jose
Period	15/5/10 → 15/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/CLEO_SI.2015.SM2F.1

Cite this

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots. / Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa et al.
CLEO: Science and Innovations, CLEO-SI 2015. Optical Society of America (OSA), 2015. p. 2267 (CLEO: Science and Innovations, CLEO-SI 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tatebayashi, J, Kako, S, Ho, J, Ota, Y, Iwamoto, S & Arakawa, Y 2015, Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots. in CLEO: Science and Innovations, CLEO-SI 2015. CLEO: Science and Innovations, CLEO-SI 2015, Optical Society of America (OSA), pp. 2267, CLEO: Science and Innovations, CLEO-SI 2015, San Jose, United States, 15/5/10. https://doi.org/10.1364/CLEO_SI.2015.SM2F.1

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title = "Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots",

abstract = "We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μJ/cm2.",

author = "Jun Tatebayashi and Satoshi Kako and Jinfa Ho and Yasutomo Ota and Satoshi Iwamoto and Yasuhiko Arakawa",

year = "2015",

month = may,

day = "4",

doi = "10.1364/CLEO_SI.2015.SM2F.1",

language = "English",

series = "CLEO: Science and Innovations, CLEO-SI 2015",

publisher = "Optical Society of America (OSA)",

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AU - Tatebayashi, Jun

AU - Kako, Satoshi

AU - Ho, Jinfa

AU - Ota, Yasutomo

AU - Iwamoto, Satoshi

AU - Arakawa, Yasuhiko

PY - 2015/5/4

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N2 - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μJ/cm2.

AB - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μJ/cm2.

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AN - SCOPUS:84935428804

T3 - CLEO: Science and Innovations, CLEO-SI 2015

SP - 2267

BT - CLEO

PB - Optical Society of America (OSA)

T2 - CLEO: Science and Innovations, CLEO-SI 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Abstract

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ASJC Scopus subject areas

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