Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Jun Tatebayashi; Satoshi Kako; Jinfa Ho; Yasutomo Ota; Satoshi Iwamoto; Yasuhiko Arakawa

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Jun Tatebayashi, Satoshi Kako, Jinfa Ho, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In_0.22Ga_0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm².

Original language	English
Title of host publication	2015 Conference on Lasers and Electro-Optics, CLEO 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557529688
Publication status	Published - 2015 Aug 10
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15

Publication series

Name	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2015-August

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	15/5/10 → 15/5/15

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Tatebayashi, J., Kako, S., Ho, J., Ota, Y., Iwamoto, S., & Arakawa, Y. (2015). Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 Article 7183838 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots. / Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa et al.
2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7183838 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tatebayashi, J, Kako, S, Ho, J, Ota, Y, Iwamoto, S & Arakawa, Y 2015, Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7183838, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 15/5/10.

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abstract = "We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.",

author = "Jun Tatebayashi and Satoshi Kako and Jinfa Ho and Yasutomo Ota and Satoshi Iwamoto and Yasuhiko Arakawa",

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AU - Iwamoto, Satoshi

AU - Arakawa, Yasuhiko

PY - 2015/8/10

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N2 - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.

AB - We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.

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T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest

BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015

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ER -

Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots

Abstract

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ASJC Scopus subject areas

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