Room-temperature photoluminescence observation of stacking faults in 3C-SiC

Rii Hirano, Michio Tajima, Kohei M. Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SF C) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFC based on the broadening of the 2.3 eV peak.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)0878492798, 9780878492794
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: 2009 Oct 112009 Oct 16

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009


  • 3C-SiC
  • Epitaxial layer
  • Photoluminescence
  • Stacking faults

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Room-temperature photoluminescence observation of stacking faults in 3C-SiC'. Together they form a unique fingerprint.

Cite this