TY - JOUR
T1 - Room-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well
AU - Myronov, Maksym
AU - Sawano, Kentarou
AU - Itoh, Kohei M.
AU - Shiraki, Yasuhiro
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008/2
Y1 - 2008/2
N2 - The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm2V -1 s-1 with carrier density of 1 × 1011 cm-2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670cm2V-1 s-1 and the pronounced increase of carrier density up to 4.4 × 1011 cm -2. Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.
AB - The drift mobility, carrier density and conductivity of the two-dimensional electron gas (2DEG) confined in the tensilely strained 15nm Si quantum well (QW) of SiGe heterostructures were obtained by mobility spectrum analysis at room-temperature. The highest 2DEG drift mobility of 2900 cm2V -1 s-1 with carrier density of 1 × 1011 cm-2 were observed in the Si QW with -0.9% tensile strain. However, the increase of strain up to -1.08% resulted in the decline of 2DEG drift mobility down to 2670cm2V-1 s-1 and the pronounced increase of carrier density up to 4.4 × 1011 cm -2. Nevertheless, the pronounced enhancement of 2DEG conductivity was observed.
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U2 - 10.1143/APEX.1.021402
DO - 10.1143/APEX.1.021402
M3 - Article
AN - SCOPUS:57049141045
SN - 1882-0778
VL - 1
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 021402
ER -