Scalable quantum computing with ion-implanted dopant atoms in Silicon

A. Morello, G. Tosi, F. A. Mohiyaddin, V. Schmitt, V. Mourik, T. Botzem, A. Laucht, J. J. Pla, S. Tenberg, R. Savytskyy, M. Madzik, F. Hudson, A. S. Dzurak, K. M. Itoh, A. M. Jakob, B. C. Johnson, J. C. McCallum, D. N. Jamieson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We present a scalable strategy to manufacture quantum computer devices, by encoding quantum information in the combined electron-nuclear spin state of individual ion-implanted phosphorus dopant atoms in silicon. Our strategy allows a typical pitch between quantum bits of order 200 nm, and retains compatibility with the standard fabrication processes adopted in classical CMOS nanoelectronic devices. We theoretically predict fast and high-fidelity quantum logic operations, and present preliminary experimental progress towards the realization of a 'flip-flop' qubit system.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.2.1-6.2.4
ISBN (Electronic)9781728119878
DOIs
Publication statusPublished - 2018 Jul 2
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 2018 Dec 12018 Dec 5

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Country/TerritoryUnited States
CitySan Francisco
Period18/12/118/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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