TY - JOUR
T1 - Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics
AU - Koshiba, S.
AU - Watanabe, S.
AU - Nakamura, Y.
AU - Yamauchi, M.
AU - Yoshita, M.
AU - Baba, M.
AU - Akiyama, H.
AU - Sakaki, H.
PY - 1999/5
Y1 - 1999/5
N2 - We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures (Ts), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7-290 K by optical pumping.
AB - We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures (Ts), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7-290 K by optical pumping.
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U2 - 10.1016/S0022-0248(98)01481-X
DO - 10.1016/S0022-0248(98)01481-X
M3 - Conference article
AN - SCOPUS:0032629444
SN - 0022-0248
VL - 201
SP - 810
EP - 813
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -