Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme

K. Matsuyama, N. Murashima, M. Higashidani, Y. Nozaki

Research output: Contribution to journalConference articlepeer-review


Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current Iw markedly increases with the additional assist current Ia. Threshold value of Iw required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region.

Original languageEnglish
Pages (from-to)2767-2769
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number5 I
Publication statusPublished - 2000 Sept
Externally publishedYes
Event2000 International Magnetics Conference (INTERMAG 2000) - Toronto, Ont, Canada
Duration: 2000 Apr 92000 Apr 12


  • EB lithography
  • Magnetic domain
  • Magnetic random access memory
  • Magnetization reversal
  • Spin valve

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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