Selenium double donors in neutron transmutation doped, isotopically controlled germanium

C. S. Olsen; J. W. Beeman; K. M. Itoh; J. Farmer; V. I. Ozhogin; E. E. Haller

doi:10.1016/S0038-1098(98)00314-7

Selenium double donors in neutron transmutation doped, isotopically controlled germanium

C. S. Olsen, J. W. Beeman, K. M. Itoh, J. Farmer, V. I. Ozhogin, E. E. Haller

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Far infrared photoconductivity and absorption measurements were performed on isotopically controlled ⁷⁶Ge samples that were neutron irradiated to produce ⁷⁷Se through double beta decay. The spectra exhibit ground state to bound excited state transitions which place the first ionization level of Se at E_c-0.2688 eV. Hall effect measurements on compensated Ge:Se single crystals yield the second ionization level in the lower half of the band gap at E_ν+0.17 eV. Our experiments offer the first unambiguous identification of the deep donor level formed by single Se atoms on Ge lattice sites and verify earlier findings.

Original language	English
Pages (from-to)	895-898
Number of pages	4
Journal	Solid State Communications
Volume	108
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(98)00314-7
Publication status	Published - 1998 Nov 13
Externally published	Yes

Keywords

A. semiconductor
C. impurities in semiconductors

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00314-7

Cite this

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title = "Selenium double donors in neutron transmutation doped, isotopically controlled germanium",

abstract = "Far infrared photoconductivity and absorption measurements were performed on isotopically controlled 76Ge samples that were neutron irradiated to produce 77Se through double beta decay. The spectra exhibit ground state to bound excited state transitions which place the first ionization level of Se at Ec-0.2688 eV. Hall effect measurements on compensated Ge:Se single crystals yield the second ionization level in the lower half of the band gap at Eν+0.17 eV. Our experiments offer the first unambiguous identification of the deep donor level formed by single Se atoms on Ge lattice sites and verify earlier findings.",

keywords = "A. semiconductor, C. impurities in semiconductors",

author = "Olsen, {C. S.} and Beeman, {J. W.} and Itoh, {K. M.} and J. Farmer and Ozhogin, {V. I.} and Haller, {E. E.}",

note = "Funding Information: This work was supported in part by National Aeronautics and Space Administration under contracts W17605 and A59513C through interagency agreement with U.S. Department of Energy under contract DE-AC03-76SF00098.",

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month = nov,

day = "13",

doi = "10.1016/S0038-1098(98)00314-7",

language = "English",

volume = "108",

pages = "895--898",

journal = "Solid State Communications",

issn = "0038-1098",

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number = "11",

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TY - JOUR

T1 - Selenium double donors in neutron transmutation doped, isotopically controlled germanium

AU - Olsen, C. S.

AU - Beeman, J. W.

AU - Itoh, K. M.

AU - Farmer, J.

AU - Ozhogin, V. I.

AU - Haller, E. E.

N1 - Funding Information: This work was supported in part by National Aeronautics and Space Administration under contracts W17605 and A59513C through interagency agreement with U.S. Department of Energy under contract DE-AC03-76SF00098.

PY - 1998/11/13

Y1 - 1998/11/13

N2 - Far infrared photoconductivity and absorption measurements were performed on isotopically controlled 76Ge samples that were neutron irradiated to produce 77Se through double beta decay. The spectra exhibit ground state to bound excited state transitions which place the first ionization level of Se at Ec-0.2688 eV. Hall effect measurements on compensated Ge:Se single crystals yield the second ionization level in the lower half of the band gap at Eν+0.17 eV. Our experiments offer the first unambiguous identification of the deep donor level formed by single Se atoms on Ge lattice sites and verify earlier findings.

AB - Far infrared photoconductivity and absorption measurements were performed on isotopically controlled 76Ge samples that were neutron irradiated to produce 77Se through double beta decay. The spectra exhibit ground state to bound excited state transitions which place the first ionization level of Se at Ec-0.2688 eV. Hall effect measurements on compensated Ge:Se single crystals yield the second ionization level in the lower half of the band gap at Eν+0.17 eV. Our experiments offer the first unambiguous identification of the deep donor level formed by single Se atoms on Ge lattice sites and verify earlier findings.

KW - A. semiconductor

KW - C. impurities in semiconductors

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DO - 10.1016/S0038-1098(98)00314-7

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SN - 0038-1098

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SP - 895

EP - 898

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

Selenium double donors in neutron transmutation doped, isotopically controlled germanium

Abstract

Keywords

ASJC Scopus subject areas

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