Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions

Tomonori Takahashi; Shigeto Fukatsu; Kohei M. Itoh; Masashi Uematsu; Akira Fujiwara; Hiroyuki Kageshima; Yasuo Takahashi; Kenji Shiraishi

doi:10.1063/1.1554487

Self-diffusion of Si in thermally grown SiO₂ under equilibrium conditions

Tomonori Takahashi, Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Akira Fujiwara, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

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78 Citations (Scopus)

Abstract

Self-diffusion coefficients of Si in thermally grown SiO₂ were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

Original language	English
Pages (from-to)	3674-3676
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1554487
Publication status	Published - 2003 Mar 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions",

abstract = "Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.",

author = "Tomonori Takahashi and Shigeto Fukatsu and Itoh, {Kohei M.} and Masashi Uematsu and Akira Fujiwara and Hiroyuki Kageshima and Yasuo Takahashi and Kenji Shiraishi",

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AU - Takahashi, Tomonori

AU - Fukatsu, Shigeto

AU - Itoh, Kohei M.

AU - Uematsu, Masashi

AU - Fujiwara, Akira

AU - Kageshima, Hiroyuki

AU - Takahashi, Yasuo

AU - Shiraishi, Kenji

PY - 2003/3/15

Y1 - 2003/3/15

N2 - Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

AB - Self-diffusion coefficients of Si in thermally grown SiO2 were analysed under equilibrium conditions. Self-diffusion of Si was induced by proper heat treatments. The analysis showed that diffusion coefficients found under equilibrium conditions at 1150-1300°C were more than two orders of magnitude smaller than the values measured in non-equilibrium conditions.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Self-diffusion of Si in thermally grown SiO₂ under equilibrium conditions

Abstract

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