Shear force detector using piezo-resistive beams with sidewall-doping

H. Takahashi; A. Nakai; K. Matsumoto; I. Shimoyama

doi:10.1109/MEMSYS.2012.6170259

Shear force detector using piezo-resistive beams with sidewall-doping

H. Takahashi, A. Nakai, K. Matsumoto, I. Shimoyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.

Original language	English
Title of host publication	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages	599-602
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2012.6170259
Publication status	Published - 2012 May 7
Externally published	Yes
Event	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France Duration: 2012 Jan 29 → 2012 Feb 2

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Other

Other	2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Country/Territory	France
City	Paris
Period	12/1/29 → 12/2/2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2012.6170259

Cite this

Takahashi, H., Nakai, A., Matsumoto, K., & Shimoyama, I. (2012). Shear force detector using piezo-resistive beams with sidewall-doping. In 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 (pp. 599-602). Article 6170259 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2012.6170259

Shear force detector using piezo-resistive beams with sidewall-doping. / Takahashi, H.; Nakai, A.; Matsumoto, K. et al.
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012. 2012. p. 599-602 6170259 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takahashi, H, Nakai, A, Matsumoto, K & Shimoyama, I 2012, Shear force detector using piezo-resistive beams with sidewall-doping. in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012., 6170259, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 599-602, 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012, Paris, France, 12/1/29. https://doi.org/10.1109/MEMSYS.2012.6170259

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abstract = "This paper reports on a shear force detector using piezo-resistive beams with sidewall doping embedded in elastic body. These beams are formed using a 20 μm-thick device Si layer of an SOI (Silicon on Insulator) wafer. Shear force is measured by the resistance change due to the extension/compression of the sidewall. The size of the beams is 180 μm x 15 μm x 20 μm (length x width x thickness). Using these shear force detectors, a triaxial tactile sensor can be fabricated.",

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Shear force detector using piezo-resistive beams with sidewall-doping

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