Short-Channel Effects in Subquarter-Micrometer-Gate HEMT’s: Simulation and Experiment

Yuji Awano, Makoto Kosugi, Kinjiro Kosemura, Takashi Mimura, Masayuki Abe

Research output: Contribution to journalArticlepeer-review

158 Citations (Scopus)


We have studied the electrical properties of subquarter- micrometer-gate HEMT's by Monte Carlo simulation and experiment. The theoretical dependence of HEMT performance on the aspect ratio of the channel is discussed. The contribution of the transverse domain to the short-channel effect is also reported. Experimentally, only a negligible short-channel effect was observed when the gate length was reduced from 1.25 to 0.14 μm. Thus, it is not necessary to design and fabricate a special structure for HEMT’s, as such a structure might have limited applications.

Original languageEnglish
Pages (from-to)2260-2266
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 1989 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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