Si atom wire growth for quantum information processing

Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

Research output: Contribution to journalArticlepeer-review


We report on the experimental realization of straight atomic wires of Si on a vicinal Si(111) substrate. Atomic-kink-free steps with an identical structure are formed on the clean substrate by prolonged annealing around 800 °C. The direction of the annealing DC current that is effective to extend the straight step region is the so-called kink-up direction. Furthermore, the step-edge structure obtained is serendipitously suitable for the exclusive growth of the single adatom wires by molecular beam epitaxy. An isotopic version of such a structure is expected to be the most basic building block for a silicon-based quantum computer.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Jun 5


  • Molecular beam epitaxy
  • Nanostructures
  • Scanning tunnelling microscopy
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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