Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

K. Nonaka; Hiroyuki Tsuda; T. Kurokawa; H. Uenohara; H. Iwamura

doi:10.1109/ISLC.1992.763607

Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

K. Nonaka, Hiroyuki Tsuda, T. Kurokawa, H. Uenohara, H. Iwamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.

Original language	English
Title of host publication	Conference Digest - 13th IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	132-133
Number of pages	2
ISBN (Electronic)	4930813514
DOIs	https://doi.org/10.1109/ISLC.1992.763607
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan Duration: 1992 Sept 21 → 1992 Sept 25

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	1992-September
ISSN (Print)	0899-9406

Conference

Conference	13th IEEE International Semiconductor Laser Conference, ISLC 1992
Country/Territory	Japan
City	Takamatsu, Kagawa
Period	92/9/21 → 92/9/25

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.1992.763607

Cite this

Nonaka, K., Tsuda, H., Kurokawa, T., Uenohara, H., & Iwamura, H. (1992). Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. In Conference Digest - 13th IEEE International Semiconductor Laser Conference (pp. 132-133). Article 763607 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.1992.763607

Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. / Nonaka, K.; Tsuda, Hiroyuki; Kurokawa, T. et al.
Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. p. 132-133 763607 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nonaka, K, Tsuda, H, Kurokawa, T, Uenohara, H & Iwamura, H 1992, Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. in Conference Digest - 13th IEEE International Semiconductor Laser Conference., 763607, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 1992-September, Institute of Electrical and Electronics Engineers Inc., pp. 132-133, 13th IEEE International Semiconductor Laser Conference, ISLC 1992, Takamatsu, Kagawa, Japan, 92/9/21. https://doi.org/10.1109/ISLC.1992.763607

Nonaka K, Tsuda H, Kurokawa T, Uenohara H, Iwamura H. Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. In Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 1992. p. 132-133. 763607. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.1992.763607

Nonaka, K. ; Tsuda, Hiroyuki ; Kurokawa, T. et al. / Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 132-133 (Conference Digest - IEEE International Semiconductor Laser Conference).

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abstract = "A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.",

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Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

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