Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

K. Nonaka; H. Tsuda; T. Kurokawa; H. Uenohara; H. Iwamura

doi:10.1109/ISLC.1992.763607

Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

K. Nonaka
, H. Tsuda
, T. Kurokawa
, H. Uenohara
, H. Iwamura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.

Original language	English
Title of host publication	Conference Digest - 13th IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	132-133
Number of pages	2
ISBN (Electronic)	4930813514
DOIs	https://doi.org/10.1109/ISLC.1992.763607
Publication status	Published - 1992
Externally published	Yes
Event	13th IEEE International Semiconductor Laser Conference, ISLC 1992 - Takamatsu, Kagawa, Japan Duration: 1992 Sept 21 → 1992 Sept 25

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	1992-September
ISSN (Print)	0899-9406

Conference

Conference	13th IEEE International Semiconductor Laser Conference, ISLC 1992
Country/Territory	Japan
City	Takamatsu, Kagawa
Period	92/9/21 → 92/9/25

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.1992.763607

Cite this

Nonaka, K., Tsuda, H., Kurokawa, T., Uenohara, H., & Iwamura, H. (1992). Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. In Conference Digest - 13th IEEE International Semiconductor Laser Conference (pp. 132-133). Article 763607 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.1992.763607

Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. / Nonaka, K.; Tsuda, H.; Kurokawa, T. et al.
Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 1992. p. 132-133 763607 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 1992-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nonaka, K, Tsuda, H, Kurokawa, T, Uenohara, H & Iwamura, H 1992, Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. in Conference Digest - 13th IEEE International Semiconductor Laser Conference., 763607, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 1992-September, Institute of Electrical and Electronics Engineers Inc., pp. 132-133, 13th IEEE International Semiconductor Laser Conference, ISLC 1992, Takamatsu, Kagawa, Japan, 92/9/21. https://doi.org/10.1109/ISLC.1992.763607

Nonaka K, Tsuda H, Kurokawa T, Uenohara H, Iwamura H. Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region. In Conference Digest - 13th IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 1992. p. 132-133. 763607. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.1992.763607

@inproceedings{86d2ade68fc745c6a5c34cbd3e60a97d,

title = "Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region",

abstract = "A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.",

author = "K. Nonaka and H. Tsuda and T. Kurokawa and H. Uenohara and H. Iwamura",

note = "Publisher Copyright: {\textcopyright} 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved.; 13th IEEE International Semiconductor Laser Conference, ISLC 1992 ; Conference date: 21-09-1992 Through 25-09-1992",

year = "1992",

doi = "10.1109/ISLC.1992.763607",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "132--133",

booktitle = "Conference Digest - 13th IEEE International Semiconductor Laser Conference",

}

TY - GEN

T1 - Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

AU - Nonaka, K.

AU - Tsuda, H.

AU - Kurokawa, T.

AU - Uenohara, H.

AU - Iwamura, H.

PY - 1992

Y1 - 1992

N2 - A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.

AB - A new structure InGaAs/InP MQW bistable laser-diode with a sub-waveguide for light injection is demonstrated. Very small sensitivity dependence on input light wavelength (28 nm of 3 dB bandwidth) and high isolation of input versus output (over 30 dB) are observed.

UR - https://www.scopus.com/pages/publications/85037548503

UR - https://www.scopus.com/pages/publications/85037548503#tab=citedBy

U2 - 10.1109/ISLC.1992.763607

DO - 10.1109/ISLC.1992.763607

M3 - Conference contribution

AN - SCOPUS:85037548503

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 132

EP - 133

BT - Conference Digest - 13th IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th IEEE International Semiconductor Laser Conference, ISLC 1992

Y2 - 21 September 1992 through 25 September 1992

ER -

Side-injection light control bistable laser diode with InGaAs/InP MQW saturable absorption region

Abstract

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ASJC Scopus subject areas

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