Side-light-injection MQW bistable laser using saturable absorption and gain quenching

H. Uenohara; Y. Kawamura; H. Iwamura; K. Nonaka; H. Tsuda; T. Kurokawa

doi:10.1049/el:19921265

Side-light-injection MQW bistable laser using saturable absorption and gain quenching

H. Uenohara, Y. Kawamura, H. Iwamura, K. Nonaka, H. Tsuda, T. Kurokawa

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.

Original language	English
Pages (from-to)	1973-1975
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	21
DOIs	https://doi.org/10.1049/el:19921265
Publication status	Published - 1992 Oct
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19921265

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@article{41add83b682b46abb7ff064c1a9ed182,

title = "Side-light-injection MQW bistable laser using saturable absorption and gain quenching",

abstract = "The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.",

keywords = "Lasers, Semiconductor lasers",

author = "H. Uenohara and Y. Kawamura and H. Iwamura and K. Nonaka and H. Tsuda and T. Kurokawa",

year = "1992",

month = oct,

doi = "10.1049/el:19921265",

language = "English",

volume = "28",

pages = "1973--1975",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "21",

}

TY - JOUR

T1 - Side-light-injection MQW bistable laser using saturable absorption and gain quenching

AU - Uenohara, H.

AU - Kawamura, Y.

AU - Iwamura, H.

AU - Nonaka, K.

AU - Tsuda, H.

AU - Kurokawa, T.

PY - 1992/10

Y1 - 1992/10

N2 - The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.

AB - The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.

KW - Lasers

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0027115440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027115440&partnerID=8YFLogxK

U2 - 10.1049/el:19921265

DO - 10.1049/el:19921265

M3 - Article

AN - SCOPUS:0027115440

SN - 0013-5194

VL - 28

SP - 1973

EP - 1975

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

Side-light-injection MQW bistable laser using saturable absorption and gain quenching

Abstract

Keywords

ASJC Scopus subject areas

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