Side-light-injection MQW bistable laser using saturable absorption and gain quenching

H. Uenohara, Y. Kawamura, H. Iwamura, K. Nonaka, H. Tsuda, T. Kurokawa

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The characteristics of set-on and set-off operations by input light of the same wavelength have been observed in a sidelight-injection MQW bistable laser. In this structure, the main bistable laser was located perpendicular to two waveguides for amplifying input light. Two intersections, the gain quenching region and the saturable absorption region, were spatially separated. Input light of 40 µW results in saturable absorption in one intersection biased at +0.65 V, and 570µW causes gain quenching in the other intersection biased at +0.93V.

Original languageEnglish
Pages (from-to)1973-1975
Number of pages3
JournalElectronics Letters
Issue number21
Publication statusPublished - 1992 Oct
Externally publishedYes


  • Lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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