Silicon single-electron memory & logic devices for room temperature operation

Junji Koga; Ryuji Ohba; Ken Uchida; Akira Toriumi

Silicon single-electron memory & logic devices for room temperature operation

Junji Koga, Ryuji Ohba, Ken Uchida, Akira Toriumi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

Original language	English
Pages (from-to)	143-146
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Dec 1
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{502fcf46385b4055a7be4d2c1b7238b8,

title = "Silicon single-electron memory & logic devices for room temperature operation",

abstract = "Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.",

author = "Junji Koga and Ryuji Ohba and Ken Uchida and Akira Toriumi",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "143--146",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

}

TY - JOUR

T1 - Silicon single-electron memory & logic devices for room temperature operation

AU - Koga, Junji

AU - Ohba, Ryuji

AU - Uchida, Ken

AU - Toriumi, Akira

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

AB - Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issue. In SiN dot memory, the idea of advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over the conventional CMOS logic.

UR - http://www.scopus.com/inward/record.url?scp=0035714269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035714269&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035714269

SN - 0163-1918

SP - 143

EP - 146

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Silicon single-electron memory & logic devices for room temperature operation

Abstract

ASJC Scopus subject areas

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