TY - JOUR
T1 - Simulation study of charge modulation in coupled quantum dots in silicon
AU - Kambara, Tomohiro
AU - Kodera, Tetsuo
AU - Takahashi, Tsunaki
AU - Yamahata, Gento
AU - Uchida, Ken
AU - Oda, Shunri
PY - 2011/4
Y1 - 2011/4
N2 - We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.
AB - We have calculated electron states in a lithographically defined Si double quantum dot (DQD) device. Electrons are confined near the upper interface in the silicon-on-insulator (SOI) layer by top gate and side gate voltages. Surface charge density, NS, at 4 K in DQDs is evaluated using experimental data of the gate voltage dependence of NS in a metal-oxide-semiconductor (MOS) transistor at 100 and 4 K. With optimum side gate biases, electrons are confined in QDs and coupling between QDs is controlled in a few-electron regime. We have also proposed that a charge sensor is required to read out the few-electron regime because no current flows in the DQD device.
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U2 - 10.1143/JJAP.50.04DJ05
DO - 10.1143/JJAP.50.04DJ05
M3 - Article
AN - SCOPUS:79955446168
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04DJ05
ER -