TY - GEN
T1 - Simulations of Schottky barrier diodes and tunnel transistors
AU - Matsuzawa, K.
AU - Uchida, K.
AU - Nishiyama, A.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.
AB - We present the implementation and simulated results of a practical model to cover Schottky and Ohmic contacts. The model considers thermionic emission and spatially distributed tunneling. Simulations using the present model reproduce characteristics of Schottky barrier diodes and show the transition from Schottky to ohmic as the doping level is increased. As an application example, the immunity of a Schottky barrier tunnel transistor to the short channel effect is demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=33747137525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33747137525&partnerID=8YFLogxK
U2 - 10.1109/IWCE.1998.742737
DO - 10.1109/IWCE.1998.742737
M3 - Conference contribution
AN - SCOPUS:33747137525
T3 - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
SP - 163
EP - 165
BT - Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Computational Electronics, IWCE 1998
Y2 - 19 October 1998 through 21 October 1998
ER -