Site selective growth of Ge quantum dots on AFM-patterned Si substrates

A. Hirai, K. M. Itoh

Research output: Contribution to journalConference articlepeer-review

18 Citations (Scopus)


By combining the atomic force microscope (AFM) local anodic oxidation and etching, a periodic array of nanodimples of ∼40 nm in diameter and ∼3.5 nm in depth has been made on a Si surface. Ge atoms deposited onto this patterned substrate by the MBE method nucleate preferentially in the dimples and form an array of nano Ge dots of about 50 nm in diameter and 10 nm in height.

Original languageEnglish
Pages (from-to)248-252
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4 SPEC. ISS.
Publication statusPublished - 2004 Jul
EventProceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany
Duration: 2003 Oct 132003 Oct 15


  • Atomic force microscopy
  • Ge quantum dot
  • Nano lithography
  • Nano oxidation
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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